科研:EMC服务数据在JCR1区ACS Applied Materials & Interfaces发表论文阅读次数 [1574] 发布时间 :2019-05-17 18:34:18
基于电镜中心(EMC)FEI电镜数据,深圳大学物理与能源学院用户在JCR1区期刊ACS Applied Materials & Interfaces上发表论文,具体如下:
Ultrafast Photovoltaic-Type Deep Ultraviolet Photodetectors Using
Hybrid Zero-/Two-Dimensional Heterojunctions
Hao Kan,†,‡ Wei Zheng,*,§ Richeng Lin,§ Min Li,†,‡ Chen Fu,† Huibin Sun,† Mei Dong,§ Cunhua Xu,§
Jingting Luo,*,† YongQing Fu,∥ and Feng Huang§
†Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Energy, and ‡Key Laboratory of
Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering,
Shenzhen University, 518060 Shenzhen, China
§State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou
510275, China
∥Faculty of Engineering and Environment, Northumbria University, Newcastle Upon Tyne NE1 8ST, U.K.
Deep ultraviolet (DUV) photodetectors have wide-range applications in satellite communications, air purification, and missile-plume detection. However, the critical barriers for the currently available wide-band gap semiconductor film-based DUV photodetectors are their low efficiency, complicated processes, and lattice mismatch with the substrate. Quantum dot
(QD) devices prepared using solution-based methods can solve these problems.However, so far, there are no reports on photovoltaic-type DUV photodetectors using QDs. In this study, we propose a novel methodology to construct a hybrid zero-/two-dimensional DUV photodetector (p-type graphene/ZnS QDs/4HSiC) with photovoltaic characteristics. The device exhibits excellent selectivity or the DUV light and has an ultrafast response speed (rise time: 28 μs and decay time: 0.75 ms), which are much better than those reported for conventional photoconductive photodetectors.