基于电镜中心（EMC）FEI电镜数据，深圳大学光电学院用户在JCR1区期刊Advanced Materials上发表论文，具体如下：

Semimetal–Semiconductor Transitions for Monolayer

Antimonene Nanosheets and Their Application

in Perovskite Solar Cells

Advanced Materials 2018 30 (38) DOI:https://doi.org/10.1002/adma.201803244

Fan Zhang, Junjie He, Yuren Xiang, Kai Zheng, Bin Xue, Shuai Ye, Xiao Peng,

Yuying Hao, Jiarong Lian, Pengju Zeng, Junle Qu, and Jun Song

Antimonene-based 2D materials are attracting increasing research interest

due to their superior physicochemical properties and promising applications

in next-generation electronics and optoelectronics devices. However, the

semiconductor properties of antimonene are still at the theoretical simulation

stage and are not experimentally verified, significantly restricting its

applications in specific areas. In this study, the semiconductor properties of

monolayer antimonene nanosheets are experimentally verified. It is found

that the obtained semiconductive antimonene nanosheets (SANs) exhibit

indirect bandgap properties, with photoluminescence (PL) bandgap at about

2.33 eV and PL lifetime of 4.3 ns. Moreover, the obtained SANs are ideal for

the hole extraction layer in planar inverted perovskite solar cells (PVSCs) and

significantly enhance the device performance due to fast hole extraction and

efficient hole transfer at the perovskite/hole transport layer interface. Overall,

these findings look promising for the future prospects of antimonene in electronics

and optoelectronics.